% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Rosrio:867918,
      author       = {Rosário, Carlos M. M. and Thöner, Bo and Schönhals,
                      Alexander and Menzel, Stephan and Meledin, Alexander and
                      Barradas, Nuno P. and Alves, Eduardo and Mayer, Joachim and
                      Wuttig, Matthias and Waser, Rainer and Sobolev, Nikolai A.
                      and Wouters, Dirk J.},
      title        = {{M}etallic filamentary conduction in valence change-based
                      resistive switching devices: the case of {T}a{O} x thin film
                      with x ∼ 1},
      journal      = {Nanoscale},
      volume       = {11},
      number       = {36},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2019-06516},
      pages        = {16978 - 16990},
      year         = {2019},
      abstract     = {The resistive switching in metal–oxide thin films
                      typically occurs via modulation of the oxygen content in
                      nano-sized conductive filaments. For Ta2O5-based resistive
                      switching devices, the two current models consider filaments
                      composed of oxygen vacancies and those containing metallic
                      Ta clusters. The present work tries to resolve this dispute.
                      The filaments in Ta2O5 were formerly shown to exhibit the
                      same electrical transport mechanisms as TaOx thin films with
                      x ∼ 1.0. In this paper, sputtered thin films of pure β-Ta
                      and of TaOx with different oxygen concentrations are studied
                      and compared in terms of their structure and electrical
                      transport. The structural analysis reveals the presence of
                      Ta clusters in the TaOx films. Identical electrical
                      transport characteristics were observed in the TaOx films
                      with x ∼ 1.0 and in the β-Ta film. Both show the same
                      transport mechanism, a carrier concentration on the order of
                      1022 cm−3 and a positive magnetoresistance associated with
                      weak antilocalization at T < 30 K. It is concluded that the
                      electrical transport in the TaOx films with x ∼ 1.0 is
                      dominated by percolation through Ta clusters. This means
                      that the transport in the filaments is also determined by
                      percolation through Ta clusters, strongly supporting the
                      metallic Ta filament model.},
      cin          = {PGI-10 / PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-10-20170113 / I:(DE-Juel1)PGI-7-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31498350},
      UT           = {WOS:000496763600029},
      doi          = {10.1039/C9NR05285B},
      url          = {https://juser.fz-juelich.de/record/867918},
}