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@ARTICLE{Zhu:867921,
      author       = {Zhu, Min and Song, Wenxiong and Konze, Philipp M. and Li,
                      Tao and Gault, Baptiste and Chen, Xin and Shen, Jiabin and
                      Lv, Shilong and Song, Zhitang and Wuttig, Matthias and
                      Dronskowski, Richard},
      title        = {{D}irect atomic insight into the role of dopants in
                      phase-change materials},
      journal      = {Nature Communications},
      volume       = {10},
      number       = {1},
      issn         = {2041-1723},
      address      = {[London]},
      publisher    = {Nature Publishing Group UK},
      reportid     = {FZJ-2019-06519},
      pages        = {3525},
      year         = {2019},
      abstract     = {Doping is indispensable to tailor phase-change materials
                      (PCM) in optical and electronic data storage. Very few
                      experimental studies, however, have provided quantitative
                      information on the distribution of dopants on the
                      atomic-scale. Here, we present atom-resolved images of Ag
                      and In dopants in Sb2Te-based (AIST) PCM using electron
                      microscopy and atom-probe tomography. Combing these with DFT
                      calculations and chemical-bonding analysis, we unambiguously
                      determine the dopants’ role upon recrystallization.
                      Composition profiles corroborate the substitution of Sb by
                      In and Ag, and the segregation of excessive Ag into grain
                      boundaries. While In is bonded covalently to neighboring Te,
                      Ag binds ionically. Moreover, In doping accelerates the
                      crystallization and hence operation while Ag doping limits
                      the random diffusion of In atoms and enhances the thermal
                      stability of the amorphous phase.},
      cin          = {PGI-10 / JARA-HPC},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-10-20170113 / $I:(DE-82)080012_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / Quantum chemistry of functional chalcogenide
                      for phase-change memories and other applications
                      $(jara0033_20171101)$},
      pid          = {G:(DE-HGF)POF3-521 / $G:(DE-Juel1)jara0033_20171101$},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31388013},
      UT           = {WOS:000478867500010},
      doi          = {10.1038/s41467-019-11506-0},
      url          = {https://juser.fz-juelich.de/record/867921},
}