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@ARTICLE{CojocaruMirdin:867922,
      author       = {Cojocaru-Mirédin, Oana and Hollermann, Henning and Mio,
                      Antonio M and Wang, Anthony Yu-Tung and Wuttig, Matthias},
      title        = {{R}ole of grain boundaries in {G}e–{S}b–{T}e based
                      chalcogenide superlattices},
      journal      = {Journal of physics / Condensed matter Condensed matter},
      volume       = {31},
      number       = {20},
      issn         = {1361-648X},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2019-06520},
      pages        = {204002 -},
      year         = {2019},
      abstract     = {Interfacial phase change memory devices based on a distinct
                      nanoscale structure called superlattice have been shown to
                      outperform conventional phase-change devices. This
                      improvement has been attributed to the hetero-interfaces,
                      which play an important role for the superior device
                      characteristics. However, the impact of grain boundaries
                      (GBs), usually present in large amounts in a standard
                      sputter-deposited superlattice film, on the device
                      performance has not yet been investigated.Therefore, in the
                      present work, we investigate the structure and composition
                      of superlattice films by high resolution x-ray diffraction
                      (XRD) cross-linked with state-of-the art methods, such as
                      correlative microscopy, i.e. a combination of
                      high-resolution transmission electron microscopy and atom
                      probe tomography to determine the structure and composition
                      of GBs at the nanometer scale. Two types of GBs have been
                      identified: high-angle grain boundaries (HAGBs) present in
                      the upper part of a 340 nm-thick film and low-angle grain
                      boundaries present in the first 40 nm of the bottom part
                      of the film close to the substrate. We demonstrate that the
                      strongest intermixing takes place at HAGBs, where
                      heterogeneous nucleation of Ge2Sb2Te5 can be clearly
                      determined. Yet, the Ge1Sb2Te4 phase could also be detected
                      in the near vicinity of a low-angle grain boundary. Finally,
                      a more realistic view of the intermixing phenomenon in
                      Ge–Sb–Te based chalcogenide superlattices will be
                      proposed. Moreover, we will discuss the implications of the
                      presence of GBs on the bonding states and device
                      performance.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30769332},
      UT           = {WOS:000462053300001},
      doi          = {10.1088/1361-648X/ab078b},
      url          = {https://juser.fz-juelich.de/record/867922},
}