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@ARTICLE{Dck:867923,
      author       = {Dück, Matthias M. and Schäfer, Tobias and Jakobs, Stefan
                      and Schön, Carl‐Friedrich and Niehaus, Hannah and
                      Cojocaru‐Mirédin, Oana and Wuttig, Matthias},
      title        = {{D}isorder {C}ontrol in {C}rystalline {G}e{S}b 2 {T}e 4 and
                      its {I}mpact on {C}haracteristic {L}ength {S}cales},
      journal      = {Physica status solidi / Rapid research letters Rapid
                      research letters [...]},
      volume       = {13},
      number       = {4},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-06521},
      pages        = {1800578 -},
      year         = {2019},
      abstract     = {Crystalline GeSb2Te4 (GST) is a remarkable material, as it
                      allows to continuously tune the electrical resistance by
                      orders of magnitude without involving a structural phase
                      transition or stoichiometric changes. While well‐ordered
                      specimen are metallic, increasing amounts of disorder
                      eventually lead to an insulating state with vanishing
                      conductivity in the 0 K limit, but a similar number of
                      charge carriers. Hence, GST provides ideal grounds to
                      explore the impact of disorder on transport properties.
                      Here, a sputter‐deposition process is employed that
                      enables growing biaxially textured GST films with large
                      grain sizes on mica substrates. The resulting films exhibit
                      a systematic variation between metallic and truly insulating
                      specimen upon varying deposition temperature. Transport
                      measurements reveal that their electron mean free path can
                      be altered by a factor of 20, while always remaining more
                      than an order of magnitude smaller than the lateral grain
                      size. This proves unequivocally that grain boundaries play a
                      negligible role for electron scattering, while intra‐grain
                      scattering, presumably by disordered vacancies, dominates.
                      These findings underline that the insulating state and the
                      system's evolution toward metallic conductivity are
                      intrinsic properties of the material.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000465029000006},
      doi          = {10.1002/pssr.201800578},
      url          = {https://juser.fz-juelich.de/record/867923},
}