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@ARTICLE{Zhang:867924,
      author       = {Zhang, Wei and Wuttig, Matthias},
      title        = {{P}hase {C}hange {M}aterials and {S}uperlattices for
                      {N}on‐{V}olatile {M}emories},
      journal      = {Physica status solidi / Rapid research letters Rapid
                      research letters [...]},
      volume       = {13},
      number       = {4},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-06522},
      pages        = {1900130 -},
      year         = {2019},
      abstract     = {The global size of data doubles every two years and will
                      reach 44 zettabytes by 2020. Such huge amount of data poses
                      a serious challenge on data storage and processing. To
                      further improve computing and power efficiencies, changes in
                      computing architecture and hardware are urgently needed.
                      Chalcogenide phase‐change material based random access
                      memories (PRAMs) are one of the leading candidates for such
                      purpose. PRAMs combine the advantages of non‐volatility
                      and fast operation speed, and they have recently entered the
                      global memory market as Storage‐Class Memories (SCMs),
                      filling the performance gap between dynamic random access
                      memories (DRAMs) and flash memory‐based solid state hard
                      drives (SSDs). In addition, PRAMs hold the promise for
                      subnanosecond memory operations and neuro‐inspired
                      computing, which may lead to the development of universal
                      memory and brain‐like computing devices. These novel
                      devices are expected to result in a substantial improvement
                      in computing and power efficiencies, owing to the
                      fundamental change in memory hierarchy and computing
                      architecture},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000465029000001},
      doi          = {10.1002/pssr.201900130},
      url          = {https://juser.fz-juelich.de/record/867924},
}