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@ARTICLE{Xu:867949,
      author       = {Xu, Ming and Jakobs, Stefan and Mazzarello, Riccardo and
                      Cho, Ju-Young and Yang, Zhe and Hollermann, Henning and
                      Shang, Dashan and Miao, Xiangshui and Yu, Zhenhai and Wang,
                      Lin and Wuttig, Matthias},
      title        = {{I}mpact of {P}ressure on the {R}esonant {B}onding in
                      {C}halcogenides},
      journal      = {The journal of physical chemistry / C C, Nanomaterials and
                      interfaces},
      volume       = {121},
      number       = {45},
      issn         = {1932-7455},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2019-06542},
      pages        = {25447 - 25454},
      year         = {2017},
      abstract     = {Resonant bonding has been appreciated as an important
                      feature in some chalcogenides. The establishment of resonant
                      bonding can significantly delocalize the electrons and
                      shrink the band gap, leading to low electrical resistivity
                      and soft optical phonons. Many materials that exhibit this
                      bonding mechanism have applications in phase-change memory
                      and thermoelectric devices. Resonant bonding can be tuned by
                      various means, including thermal excitations and changes in
                      composition. In this work, we manipulate it by applying
                      large hydrostatic-like pressure. Synchrotron X-ray
                      diffraction and density functional theory reveal that the
                      orthorhombic lattice of GeSe appears to become more
                      symmetric and the Born effective charge has significantly
                      increased at high pressure, indicating that resonant bonding
                      has been established in this material. In contrast, the
                      resonant bonding is partially weakened in PbSe at high
                      pressure due to the discontinuity of chemical bonds along a
                      certain lattice direction. By controlling resonant bonding
                      in chalcogenides, we are able to modify the material
                      properties and tailor them for various applications in
                      extreme conditions.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000416202900059},
      doi          = {10.1021/acs.jpcc.7b07546},
      url          = {https://juser.fz-juelich.de/record/867949},
}