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@ARTICLE{Privitera:867956,
      author       = {Privitera, S. M. S. and Mio, A. M. and Dück, M. and
                      Persch, C. and Zimbone, M. and Wuttig, Matthias and Rimini,
                      E.},
      title        = {{A}tomic disordering processes in crystalline {G}e{T}e
                      induced by ion irradiation},
      journal      = {Journal of physics / D Applied physics D},
      volume       = {51},
      number       = {49},
      issn         = {1361-6463},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2019-06549},
      pages        = {495103 -},
      year         = {2018},
      abstract     = {The damaging process of GeTe up to amorphization has been
                      studied by introducing controlled levels of disorder by
                      irradiation with 150 keV Ar+ ions. In situ reflectivity
                      measurements and ex-situ resistance and Raman spectroscopy
                      analysis have been employed to study the impact of ion
                      bombardment on the electrical conduction properties and on
                      the bonding. The results obtained are indicative for three
                      different stages of film damage. The first step appears to
                      be dominated by point defects, affecting the temperature
                      coefficient of resistance (TCR) and inducing a transition
                      from positive (metallic conduction) to negative TCR values
                      (conduction dominated by localized states), whilst the
                      material still remains crystalline. The second step is
                      characterized by the annealing of the defects induced,
                      presumably, by the formation of complex defects that act as
                      sinks for point defect recombination. This process is
                      facilitated by the high atomic mobility. The third phase of
                      damage starts at a fluence of 3.5  ×  1014 cm−2
                      and finally converts the material to the amorphous state,
                      characterized by higher resistance and decreased optical
                      reflectivity. The modifications observed upon ion
                      irradiation provide important insights into the possible
                      states that can be achieved in crystalline GeTe through
                      different local atomic arrangements towards amorphization.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000460046100001},
      doi          = {10.1088/1361-6463/aae4ae},
      url          = {https://juser.fz-juelich.de/record/867956},
}