% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Zhou:867957,
      author       = {Zhou, Chongjian and Yu, Yuan and Lee, Yong Kyu and
                      Cojocaru-Mirédin, Oana and Yoo, Byeongjun and Cho, Sung-Pyo
                      and Im, Jino and Wuttig, Matthias and Hyeon, Taeghwan and
                      Chung, In},
      title        = {{H}igh-{P}erformance n-{T}ype {P}b{S}e–{C}u 2 {S}e
                      {T}hermoelectrics through {C}onduction {B}and {E}ngineering
                      and {P}honon {S}oftening},
      journal      = {Journal of the American Chemical Society},
      volume       = {140},
      number       = {45},
      issn         = {1520-5126},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2019-06550},
      pages        = {15535 - 15545},
      year         = {2018},
      abstract     = {From a structural and economic perspective, tellurium-free
                      PbSe can be an attractive alternative to its more expensive
                      isostructural analogue of PbTe for intermediate temperature
                      power generation. Here we report that
                      $PbSe0.998Br0.002-2\%Cu2Se$ exhibits record high peak ZT 1.8
                      at 723 K and average ZT 1.1 between 300 and 823 K to date
                      for all previously reported n- and p-type PbSe-based
                      materials as well as tellurium-free n-type polycrystalline
                      materials. These even rival the highest reported values for
                      n-type PbTe-based materials. Cu2Se doping not only enhance
                      charge transport properties but also depress thermal
                      conductivity of n-type PbSe. It flattens the edge of the
                      conduction band of PbSe, increases the effective mass of
                      charge carriers, and enlarges the energy band gap, which
                      collectively improve the Seebeck coefficient markedly. This
                      is the first example of manipulating the electronic
                      conduction band to enhance the thermoelectric properties of
                      n-type PbSe. Concurrently, Cu2Se increases the carrier
                      concentration with nearly no loss in carrier mobility, even
                      increasing the electrical conductivity above ∼423 K. The
                      resulting power factor is ultrahigh, reaching ∼21–26 μW
                      cm–1 K–2 over a wide range of temperature from ∼423 to
                      723 K. Cu2Se doping substantially reduces the lattice
                      thermal conductivity to ∼0.4 W m–1 K–1 at 773 K,
                      approaching its theoretical amorphous limit. According to
                      first-principles calculations, the achieved ultralow value
                      can be attributed to remarkable acoustic phonon softening at
                      the low-frequency region.},
      cin          = {PGI-10},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30343568},
      UT           = {WOS:000451100600051},
      doi          = {10.1021/jacs.8b10448},
      url          = {https://juser.fz-juelich.de/record/867957},
}