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@ARTICLE{Pries:867961,
      author       = {Pries, Julian and Wei, Shuai and Wuttig, Matthias and
                      Lucas, Pierre},
      title        = {{S}witching between {C}rystallization from the {G}lassy and
                      the {U}ndercooled {L}iquid {P}hase in {P}hase {C}hange
                      {M}aterial {G}e 2 {S}b 2 {T}e 5},
      journal      = {Advanced materials},
      volume       = {31},
      number       = {39},
      issn         = {1521-4095},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-06554},
      pages        = {1900784 -},
      year         = {2019},
      abstract     = {Controlling crystallization kinetics is key to overcome the
                      temperature–time dilemma in phase change materials
                      employed for data storage. While the amorphous phase must be
                      preserved for more than 10 years at slightly above room
                      temperature to ensure data integrity, it has to crystallize
                      on a timescale of several nanoseconds following a moderate
                      temperature increase to near 2/3 Tm to compete with other
                      memory devices such as dynamic random access memory (DRAM).
                      Here, a calorimetric demonstration that this striking
                      variation in kinetics involves crystallization occurring
                      either from the glassy or from the undercooled liquid state
                      is provided. Measurements of crystallization kinetics of
                      Ge2Sb2Te5 with heating rates spanning over six orders of
                      magnitude reveal a fourfold decrease in Kissinger activation
                      energy for crystallization upon the glass transition. This
                      enables rapid crystallization above the glass transition
                      temperature Tg. Moreover, highly unusual for glass‐forming
                      systems, crystallization at conventional heating rates is
                      observed more than 50 °C below Tg, where the atomic
                      mobility should be vanishingly small.},
      cin          = {PGI-10},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31385632},
      UT           = {WOS:000479612900001},
      doi          = {10.1002/adma.201900784},
      url          = {https://juser.fz-juelich.de/record/867961},
}