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@INPROCEEDINGS{Kumar:868009,
      author       = {Kumar, Shashank and Durini, Daniel and Degenhardt, Carsten
                      and van Waasen, Stefan},
      title        = {{A}ssessment of performance of silicon photomultipliers in
                      scintillator based neutron detectors},
      reportid     = {FZJ-2019-06602},
      year         = {2018},
      abstract     = {Scintillator based neutron detectors are a prominent
                      alternative to 3He based gas detectors traditionally used
                      for detecting cold and thermal neutrons. Over the last
                      years, photomultiplier tubes (PMT) have been the
                      predominantly used photodetector technology in position
                      sensitive neutron detectors [1,2], built following the Anger
                      camera [3] principle. However, the high voltage requirements
                      (of some kV), gain fluctuations and sensitivity to magnetic
                      field, have triggered the search for alternative
                      photodetectors. One possible solution is using solid-state
                      detectors capable of single-photon counting at even shorter
                      response times, such as silicon photomultipliers (SiPM) or
                      single photon avalanche photodiode (SPAD) arrays,
                      additionally offering operability in presence of magnetic
                      field, relative compactness, much lower biasing voltages
                      (between 25V and 70V), as well as relatively lower
                      production costs. SiPM technology has been largely ignored
                      due to its vulnerability to radiation damage caused by
                      exposure to neutrons, which may lead to the increase of dark
                      current and the decrease in their photon detection
                      efficiency (PDE). In order to assess the possibility of
                      using SiPMs for this application, we irradiated one digital
                      and two different analog SiPM arrays with cold neutrons of
                      5Å wavelength and a dose up to 6E12 n/cm2 at the KWS-1
                      instrument of the Heinz Maier-Leibnitz Zentrum (MLZ) in
                      Garching, Germany. The purpose of the investigation [4, 5]
                      was to analyse the effect of the radiation induced damage in
                      the SiPMs. The figure of merit quantified for this work was
                      dark signal and photon detection efficiency (PDE) of the
                      SiPM arrays, before and after irradiation with cold
                      neutrons. The results of the study concluded that this
                      technology is sufficiently tolerant to radiation damage with
                      an expected lifetime of 10 years and acceptable PDE
                      performance, which provides a fruitful insight for their
                      acceptability in this application.},
      month         = {May},
      date          = {2018-05-15},
      organization  = {International Workshop on Position
                       Sensitive Neutron Detectors, Juelich
                       (Germany), 15 May 2018 - 17 May 2018},
      subtyp        = {After Call},
      cin          = {ZEA-2},
      cid          = {I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {632 - Detector technology and systems (POF3-632)},
      pid          = {G:(DE-HGF)POF3-632},
      experiment   = {EXP:(DE-MLZ)TREFF-20140101},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/868009},
}