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024 7 _ |2 DOI
|a 10.1103/PhysRevLett.104.066802
024 7 _ |2 WOS
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024 7 _ |2 Handle
|a 2128/7233
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041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |0 P:(DE-HGF)0
|a Mathias, S.
|b 0
245 _ _ |a Quantum-well induced giant spin-orbit splitting
260 _ _ |a College Park, Md.
|b APS
|c 2010
300 _ _ |a 066802
336 7 _ |a Journal Article
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440 _ 0 |0 4925
|a Physical Review Letters
|v 104
|x 0031-9007
|y 6
500 _ _ |a This work was supported by the DFG GRK 792 and the DFG SFB/TRR49, the UPV/EHU (Grant No. GIC07IT36607), the Departamento de Educacion del Gobierno Vasco, and the Spanish MCyT (Grant No. FIS200766711C0101).
520 _ _ |a We report on the observation of a giant spin-orbit splitting of quantum-well states in the unoccupied electronic structure of a Bi monolayer on Cu(111). Up to now, Rashba-type splittings of this size have been reported exclusively for surface states in a partial band gap. With these quantum-well states we have experimentally identified a second class of states that show a huge spin-orbit splitting. First-principles electronic structure calculations show that the origin of the spin-orbit splitting is due to the perpendicular potential at the surface and interface of the ultrathin Bi film. This finding allows for the direct possibility to tailor spin-orbit splitting by means of thin-film nanofabrication.
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|a Wiesenmayer, M.
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|a Sakar, I.
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|a Koroteev, Yu. M.
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|a Echenique, P. M.
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|a Bauer, M.
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|a Aeschlimann, M.
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|a 10.1103/PhysRevLett.104.066802
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|y 2010
856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.104.066802
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