%0 Journal Article
%A Zhao, Lan-Tian
%A Liu, Mingshan
%A Ren, Qing-Hua
%A Liu, Chen-He
%A Liu, Qiang
%A Chen, Ling-Li
%A Spiegel, Yohann
%A Torregrosa, Frank
%A Yu, Wenjie
%A Zhao, Qing-Tai
%T Phase evolution of ultra-thin Ni silicide films on CF 4 plasma immersion ion implanted Si
%J Nanotechnology
%V 31
%N 20
%@ 0957-4484
%C Bristol
%I IOP Publ.
%M FZJ-2020-00065
%P 205201 -
%D 2020
%X We present a systematic study on the effects of CF4 plasma immersion ion implantation (PIII) in Si on the phase evolution of ultra-thin Ni silicides. For 3 nm Ni, NiSi2 was formed on Si substrates with and without CF4 PIII at temperature as low as 400 °C. For 6 nm Ni, NiSi was formed on pure Si, while epitaxial NiSi2 was obtained on CF4 PIII Si. The incorporation of C and F atoms in the thin epitaxial NiSi2 significantly reduces the layer resistivity. Increasing the Ni thickness to 8 nm results in the formation of NiSi, where the thermal stability of NiSi, the NiSi/Si interface and Schottky contacts are significantly improved with CF4 PIII. We suggest that the interface energy is lowered by the F and C dopants present in the layer and at the interface, leading to phase evolution of the thin Ni silicide.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:31952059
%U <Go to ISI:>//WOS:000518668500001
%R 10.1088/1361-6528/ab6d21
%U https://juser.fz-juelich.de/record/872559