TY  - JOUR
AU  - Zhao, Lan-Tian
AU  - Liu, Mingshan
AU  - Ren, Qing-Hua
AU  - Liu, Chen-He
AU  - Liu, Qiang
AU  - Chen, Ling-Li
AU  - Spiegel, Yohann
AU  - Torregrosa, Frank
AU  - Yu, Wenjie
AU  - Zhao, Qing-Tai
TI  - Phase evolution of ultra-thin Ni silicide films on CF 4 plasma immersion ion implanted Si
JO  - Nanotechnology
VL  - 31
IS  - 20
SN  - 0957-4484
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2020-00065
SP  - 205201 -
PY  - 2020
AB  - We present a systematic study on the effects of CF4 plasma immersion ion implantation (PIII) in Si on the phase evolution of ultra-thin Ni silicides. For 3 nm Ni, NiSi2 was formed on Si substrates with and without CF4 PIII at temperature as low as 400 °C. For 6 nm Ni, NiSi was formed on pure Si, while epitaxial NiSi2 was obtained on CF4 PIII Si. The incorporation of C and F atoms in the thin epitaxial NiSi2 significantly reduces the layer resistivity. Increasing the Ni thickness to 8 nm results in the formation of NiSi, where the thermal stability of NiSi, the NiSi/Si interface and Schottky contacts are significantly improved with CF4 PIII. We suggest that the interface energy is lowered by the F and C dopants present in the layer and at the interface, leading to phase evolution of the thin Ni silicide.
LB  - PUB:(DE-HGF)16
C6  - pmid:31952059
UR  - <Go to ISI:>//WOS:000518668500001
DO  - DOI:10.1088/1361-6528/ab6d21
UR  - https://juser.fz-juelich.de/record/872559
ER  -