001     872559
005     20220930130226.0
024 7 _ |a 10.1088/1361-6528/ab6d21
|2 doi
024 7 _ |a 2128/24452
|2 Handle
024 7 _ |a pmid:31952059
|2 pmid
024 7 _ |a WOS:000518668500001
|2 WOS
037 _ _ |a FZJ-2020-00065
082 _ _ |a 530
100 1 _ |a Zhao, Lan-Tian
|0 P:(DE-HGF)0
|b 0
245 _ _ |a Phase evolution of ultra-thin Ni silicide films on CF 4 plasma immersion ion implanted Si
260 _ _ |a Bristol
|c 2020
|b IOP Publ.
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1583327902_28910
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a We present a systematic study on the effects of CF4 plasma immersion ion implantation (PIII) in Si on the phase evolution of ultra-thin Ni silicides. For 3 nm Ni, NiSi2 was formed on Si substrates with and without CF4 PIII at temperature as low as 400 °C. For 6 nm Ni, NiSi was formed on pure Si, while epitaxial NiSi2 was obtained on CF4 PIII Si. The incorporation of C and F atoms in the thin epitaxial NiSi2 significantly reduces the layer resistivity. Increasing the Ni thickness to 8 nm results in the formation of NiSi, where the thermal stability of NiSi, the NiSi/Si interface and Schottky contacts are significantly improved with CF4 PIII. We suggest that the interface energy is lowered by the F and C dopants present in the layer and at the interface, leading to phase evolution of the thin Ni silicide.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Liu, Mingshan
|0 P:(DE-Juel1)173033
|b 1
|u fzj
700 1 _ |a Ren, Qing-Hua
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Liu, Chen-He
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Liu, Qiang
|0 P:(DE-HGF)0
|b 4
700 1 _ |a Chen, Ling-Li
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Spiegel, Yohann
|0 P:(DE-HGF)0
|b 6
700 1 _ |a Torregrosa, Frank
|0 P:(DE-HGF)0
|b 7
700 1 _ |a Yu, Wenjie
|0 P:(DE-HGF)0
|b 8
700 1 _ |a Zhao, Qing-Tai
|0 P:(DE-Juel1)128649
|b 9
|e Corresponding author
773 _ _ |a 10.1088/1361-6528/ab6d21
|g Vol. 31, no. 20, p. 205201 -
|0 PERI:(DE-600)1362365-5
|n 20
|p 205201 -
|t Nanotechnology
|v 31
|y 2020
|x 0957-4484
856 4 _ |y OpenAccess
|u https://juser.fz-juelich.de/record/872559/files/Zhao_2020_Nanotechnology_31_205201.pdf
856 4 _ |y OpenAccess
|x pdfa
|u https://juser.fz-juelich.de/record/872559/files/Zhao_2020_Nanotechnology_31_205201.pdf?subformat=pdfa
909 C O |o oai:juser.fz-juelich.de:872559
|p openaire
|p open_access
|p OpenAPC
|p driver
|p VDB
|p openCost
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)173033
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 9
|6 P:(DE-Juel1)128649
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2020
915 _ _ |a Creative Commons Attribution CC BY 3.0
|0 LIC:(DE-HGF)CCBY3
|2 HGFVOC
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1160
|2 StatID
|b Current Contents - Engineering, Computing and Technology
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0600
|2 StatID
|b Ebsco Academic Search
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b NANOTECHNOLOGY : 2017
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a Peer Review
|0 StatID:(DE-HGF)0030
|2 StatID
|b ASC
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0310
|2 StatID
|b NCBI Molecular Biology Database
915 _ _ |a National-Konsortium
|0 StatID:(DE-HGF)0430
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Clarivate Analytics Master Journal List
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a APC
980 1 _ |a APC
980 1 _ |a FullTexts


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