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@ARTICLE{Jones:872615,
      author       = {Jones, Robert O.},
      title        = {{P}hase change memory materials: {R}ationalizing the
                      dominance of {G}e/{S}b/{T}e alloys},
      journal      = {Physical review / B},
      volume       = {101},
      number       = {2},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2020-00108},
      pages        = {024103},
      year         = {2020},
      abstract     = {Rewritable optical storage is dominated by alloys of a
                      small number of elements, overwhelmingly Ge, Sb, and Te. For
                      over 30 years, Ge/Sb/Te alloys in the composition range
                      (GeTe)1−x(Sb2Te3)x(0≤x≤1) have been the materials of
                      choice in commercial devices: all have metastable rock-salt
                      structures that change little over decades at archival
                      temperatures, and all contain vacancies (cavities). The
                      special status of Ge/Sb/Te alloys arises from the close
                      similarity of their valence orbitals as measured by the
                      orbital radial moments, so that bonds are stronger than in
                      other combinations of elements of groups 14–16 with
                      appropriate valences. The orbital similarity arises from the
                      irregular changes in atomic orbitals and properties as the
                      atomic number increases (“secondary periodicity”). Jones
                      showed [P. R. Soc. London, Ser. A 147, 396 (1934)] that the
                      simple cubic structure of (metallic) Bi (valence
                      configuration 6s26p3) is unstable to a distortion to a
                      (semimetallic) rhombohedral structure. This picture can be
                      adapted to Ge/Sb/Te alloys to explain the metastable
                      structure of the above family of compounds where vacancies
                      almost always occur next to Te atoms, which form one
                      sublattice of the rock-salt structure. The disorder in the
                      Ge/Sb/vacancy sublattice is not random.},
      cin          = {IAS-1 / PGI-1 / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143) /
                      Density functional calculations with molecular dynamics --
                      amorphous and crystalline materials $(jiff05_20170501)$},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143 /
                      $G:(DE-Juel1)jiff05_20170501$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000506583800003},
      doi          = {10.1103/PhysRevB.101.024103},
      url          = {https://juser.fz-juelich.de/record/872615},
}