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@PHDTHESIS{Andr:872825,
      author       = {Andrä, Michael Tobias},
      title        = {{C}hemical control of the electrical surface properties of
                      n-doped transition metal oxides},
      volume       = {60},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2020-00295},
      isbn         = {978-3-95806-448-5},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {X, 150 S., S. XI-XXXVIII},
      year         = {2019},
      note         = {RWTH Aachen, Diss., 2019},
      abstract     = {Novel classes of materials are required to meet the
                      technological challenges in modern electronics. By
                      ultimately merging surface physics and band engineering
                      approaches with the chemistry of complex oxides, oxide
                      electronics are believed to meet the rapidly growing demands
                      stemming from the decreasing structure size of electronic
                      applications. A lot is known about the behavior of complex
                      oxides in the bulk. Surfaces and interfaces, however, may
                      show fundamentally varying properties due to the reduced
                      dimension and short diffusion lengths involved. Thus, the
                      surfaces of complex oxide semiconductors and especially
                      their interfaces formed with other complex oxides and metals
                      are expected to play an even more important role in the
                      technological progress of the upcoming decades. In order to
                      pave the way to novel tailored applications, understanding
                      the redox processes at the complex oxide surfaces is
                      essential. Within this thesis, state-of-the-art
                      spectroscopic tools are used that allow for in-situ surface
                      investigations in varying atmospheres thereby demonstrating
                      the differences between surface and bulk chemistry and
                      determine how space charge formation couples the surface
                      chemistry and the electronic properties. By the utilization
                      of ambient pressure photoelectron spectroscopy the previous
                      experimental limitations of an undefined surface state and
                      contamination that occurred due to the $\textit{ex-situ}$
                      transport of samples. The spectroscopic results determined
                      on $\textit{n}$-SrTiO$_{3}$ single crystals and thin films
                      clearly demonstrate the $\textit{p}$O$_{2}$-dependent
                      activation of the strontium sublattice at intermediate
                      temperatures that is accompanied by a shift of the Fermi
                      level from the conduction band edge into the band gap. This
                      shift illustrates an electron depletion layer being present
                      at the $\textit{n}$-SrTiO$_{3}$ surface and thus the
                      formation of a surface space charge layer. These findings
                      are substantiated by electrical characterization of the
                      surface contact and the $\textit{in-plane}$ sheet properties
                      in Pt/$\textit{n}$-SrTiO$_{3}$ heterostructures and
                      $\textit{n}$-SrTiO$_{3}$ thin films, respectively. The
                      surface contact of the heterojunction exhibit an increased
                      transport barrier after annealing in oxidizing conditions
                      while the thin films demonstrate a reduced carrier
                      concentration directly after growth in oxidizing conditions
                      and a $\textit{p}$O$_{2}$-dependent in-plane sheet
                      resistance.},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/872825},
}