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@ARTICLE{Dittmann:873551,
      author       = {Dittmann, R. and Strachan, J. P.},
      title        = {{R}edox-based memristive devices for new computing
                      paradigm},
      journal      = {APL materials},
      volume       = {7},
      number       = {11},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2020-00819},
      pages        = {110903 -},
      year         = {2019},
      abstract     = {Memristive devices have been a hot topic in nanoelectronics
                      for the last two decades in both academia and industry.
                      Originally proposed as digital (binary) nonvolatile random
                      access memories, research in this field was predominantly
                      driven by the search for higher performance solid-state
                      drive technologies (e.g., flash replacement) or higher
                      density memories (storage class memory). However, based on
                      their large dynamic range in resistance with
                      analog-tunability along with complex switching dynamics,
                      memristive devices enable revolutionary novel functions and
                      computing paradigms. We present the prospects,
                      opportunities, and materials challenges of memristive
                      devices in computing applications, both near and far terms.
                      Memristive devices offer at least three main types of novel
                      computing applications: in-memory computing, analog
                      computing, and state dynamics. We will present the status in
                      the understanding of the most common redox-based memristive
                      devices while addressing the challenges that materials
                      research will need to tackle in the future. In order to pave
                      the way toward novel computing paradigms, a rational design
                      of the materials stacks will be required, enabling nanoscale
                      control over the ionic dynamics that gives these devices
                      their variety of capabilities},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000508404700017},
      doi          = {10.1063/1.5129101},
      url          = {https://juser.fz-juelich.de/record/873551},
}