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000873553 1001_ $$0P:(DE-Juel1)168208$$aLeis, Arthur$$b0
000873553 245__ $$aRoom temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film
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000873553 520__ $$aOne of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe3 thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as p ~ 0.3 – 0.6, which is close to the theoretical limit.
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000873553 7001_ $$0P:(DE-Juel1)171405$$aSchleenvoigt, Michael$$b1$$ufzj
000873553 7001_ $$0P:(DE-Juel1)171826$$aJalil, Abdur Rehman$$b2
000873553 7001_ $$0P:(DE-Juel1)128762$$aCherepanov, Vasily$$b3
000873553 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b4$$ufzj
000873553 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5$$ufzj
000873553 7001_ $$0P:(DE-Juel1)128791$$aTautz, F. Stefan$$b6
000873553 7001_ $$0P:(DE-Juel1)128794$$aVoigtländer, Bert$$b7$$eCorresponding author
000873553 773__ $$0PERI:(DE-600)2615211-3$$a10.1038/s41598-020-59679-9$$gVol. 10, no. 1, p. 2816$$n1$$p2816$$tScientific reports$$v10$$x2045-2322$$y2020
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