Contribution to a conference proceedings FZJ-2020-00935

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First Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA NanowirepMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V

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2019

International Electron Device Meeting, San FransiscoSan Fransisco, USA, 9 Dec 2019 - 11 Dec 20192019-12-092019-12-11 693-696 ()


Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019
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Document types > Events > Contributions to a conference proceedings
Institute Collections > PGI > PGI-9
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Publications database

 Record created 2020-02-06, last modified 2021-01-30



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