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Conference Presentation (Other) FZJ-2020-01012
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Memristive Devices Formed By ALD Metal Oxide Growth on a Hafnium Layer – Study of the Interfacial HfO2 Formation

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2019

236th ECS Meeting, AtlantaAtlanta, USA, 13 Oct 2019 - 17 Oct 20192019-10-132019-10-17

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA Institut Green IT (PGI-10)
  3. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2019
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-10
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2020-02-11, last modified 2021-01-30
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