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@ARTICLE{Coll:873817,
      author       = {Coll, M. and Fontcuberta, J. and Althammer, M. and Bibes,
                      M. and Boschker, H. and Calleja, A. and Cheng, G. and Cuoco,
                      M. and Dittmann, R. and Dkhil, B. and El Baggari, I. and
                      Fanciulli, M. and Fina, I. and Fortunato, E. and Frontera,
                      C. and Fujita, S. and Garcia, V. and Goennenwein, S. T. B.
                      and Granqvist, C.-G. and Grollier, J. and Gross, R. and
                      Hagfeldt, A. and Herranz, G. and Hono, K. and Houwman, E.
                      and Huijben, M. and Kalaboukhov, A. and Keeble, D. J. and
                      Koster, G. and Kourkoutis, L. F. and Levy, J. and
                      Lira-Cantu, M. and MacManus-Driscoll, J. L. and Mannhart,
                      Jochen and Martins, R. and Menzel, S. and Mikolajick, T. and
                      Napari, M. and Nguyen, M. D. and Niklasson, G. and Paillard,
                      C. and Panigrahi, S. and Rijnders, G. and Sánchez, F. and
                      Sanchis, P. and Sanna, S. and Schlom, D. G. and Schroeder,
                      U. and Shen, K. M. and Siemon, A. and Spreitzer, M. and
                      Sukegawa, H. and Tamayo, R. and van den Brink, J. and Pryds,
                      N. and Granozio, F. Miletto},
      title        = {{T}owards {O}xide {E}lectronics: a {R}oadmap},
      journal      = {Applied surface science},
      volume       = {482},
      issn         = {0169-4332},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2020-01022},
      pages        = {1 - 93},
      year         = {2019},
      abstract     = {At the end of a rush lasting over half a century, in which
                      CMOS technology has been experiencing a constant and
                      breathtaking increase of device speed and density, Moore’s
                      law is approaching the insurmountable barrier given by the
                      ultimate atomic nature of matter. A major challenge for 21st
                      century scientists is finding novel strategies, concepts and
                      materials for replacing silicon-based CMOS semiconductor
                      technologies and guaranteeing a continued and steady
                      technological progress in next decades. Among the materials
                      classes candidate to contribute to this momentous challenge,
                      oxide films and heterostructures are a particularly
                      appealing hunting ground. The vastity, intended in pure
                      chemical terms, of this class of compounds, the complexity
                      of their correlated behaviour, and the wealth of functional
                      properties they display, has already made these systems the
                      subject of choice, worldwide, of a strongly networked,
                      dynamic and interdisciplinary research community.},
      cin          = {PGI-7 / JARA-FIT / IEK-2 / PGI-2},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)IEK-2-20101013 / I:(DE-Juel1)PGI-2-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000464940900001},
      doi          = {10.1016/j.apsusc.2019.03.312},
      url          = {https://juser.fz-juelich.de/record/873817},
}