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001     873817
005     20240711092255.0
024 7 _ |a 10.1016/j.apsusc.2019.03.312
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024 7 _ |a 0169-4332
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024 7 _ |a 1873-5584
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100 1 _ |a Coll, M.
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245 _ _ |a Towards Oxide Electronics: a Roadmap
260 _ _ |a Amsterdam
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520 _ _ |a At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community.
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700 1 _ |a Mannhart, Jochen
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700 1 _ |a Martins, R.
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700 1 _ |a Menzel, S.
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700 1 _ |a Napari, M.
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700 1 _ |a Nguyen, M. D.
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700 1 _ |a Paillard, C.
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700 1 _ |a Sánchez, F.
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700 1 _ |a Sanna, S.
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700 1 _ |a Schlom, D. G.
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700 1 _ |a Schroeder, U.
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700 1 _ |a Shen, K. M.
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700 1 _ |a Spreitzer, M.
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700 1 _ |a Sukegawa, H.
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700 1 _ |a Tamayo, R.
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700 1 _ |a van den Brink, J.
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700 1 _ |a Pryds, N.
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700 1 _ |a Granozio, F. Miletto
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773 _ _ |a 10.1016/j.apsusc.2019.03.312
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