Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application

Hennen, T.; Waser, R.; Bedau, D.; Wouters, D. J.; Grobis, M.; Menzel, Stephan; Funck, Carsten; Rupp, J. A. J.

Conference Presentation (Invited)

FZJ-2020-01025

Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application

Hennen, T. ; Bedau, D. ; Rupp, J. A. J. ; Funck, C.FZJ* ; Menzel, S.FZJ* ; Grobis, M. ; Waser, R.FZJ* ; Wouters, D. J.

2019

IMW, Monterey, USA, 12 May 2019 - 15 May 2019

Contributing Institute(s):

Research Program(s):

521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

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Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
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Record created 2020-02-11, last modified 2021-01-30

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