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@ARTICLE{LpezLpez:873847,
      author       = {López-López, O. and Martínez, I. and Cabrera, A. and
                      Gutiérrez-D, E. A. and Ferrusca, D. and Durini, D. and De
                      la Hidalga-Wade, F. J. and Velazquez, M. and Huerta, O. and
                      Kruth, A. and Degenhardt, C. and Artanov, A. and van Waasen,
                      S.},
      title        = {{E}nergy {C}onsumption, {C}onversion, and {T}ransfer in
                      {N}anometric {F}ield-{E}ffect {T}ransistors ({FET}) {U}sed
                      in {R}eadout {E}lectronics at {C}ryogenic {T}emperatures},
      journal      = {Journal of low temperature physics},
      volume       = {99},
      issn         = {1573-7357},
      address      = {Dordrecht},
      publisher    = {Springer Science + Business Media B.V.},
      reportid     = {FZJ-2020-01049},
      pages        = {171-181},
      year         = {2020},
      abstract     = {The energy consumed by electron devices such as
                      field-effect-transistors (FET) in an integrated circuit is
                      mostly used to process different electrical signals.
                      However, a fraction of that energy is also converted into
                      heat that gets transferred throughout the integrated circuit
                      and modifies the local temperature. The modification of the
                      local temperature, which is interpreted as a self-heating
                      mechanism, is a function of different charge carrier
                      scattering mechanisms, the characteristic energy relaxation
                      times for charge carriers, the heat carrier mechanisms, the
                      geometry of the FET, the volume of the integrated circuit,
                      and the composed thermal properties of the integrated
                      circuit and the system package. Besides all those
                      dependencies, the charge and heat transport properties are
                      temperature dependent. All these features make the
                      electrothermodynamic analysis and modeling of low-power
                      cryogenic electron devices a compulsory need. In this work,
                      we introduce an analysis based on experimental results
                      obtained from characterizing FET test structures in the
                      temperature range between 300 K and down to 3.1 K.},
      cin          = {ZEA-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000509338600003},
      doi          = {10.1007/s10909-020-02340-6},
      url          = {https://juser.fz-juelich.de/record/873847},
}