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@ARTICLE{Qiu:873971,
      author       = {Qiu, Depeng and Duan, Weiyuan and Lambertz, Andreas and
                      Bittkau, Karsten and Steuter, Paul and Liu, Yong and Gad,
                      Alaaeldin and Pomaska, Manuel and Rau, Uwe and Ding,
                      Kaining},
      title        = {{F}ront contact optimization for rear-junction {SHJ} solar
                      cells with ultra-thin n-type nanocrystalline silicon oxide},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {209},
      issn         = {0927-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {NH, Elsevier},
      reportid     = {FZJ-2020-01134},
      pages        = {110471},
      year         = {2020},
      abstract     = {In this work, ultra-thin n-type hydrogenated
                      nanocrystalline silicon oxide [(nc-SiOx:H (n)] film was used
                      to replace amorphous silicon [a-Si:H (n)] as electron
                      transport layer (ETL) in rear-junction silicon
                      heterojunction (SHJ) solar cell to reduce front parasitic
                      absorption. The contact resistivity between the transparent
                      conductive oxide (TCO) and ultra-thin ETL interface plays an
                      important role on the cell performance. A nanocrystalline
                      silicon (nc-Si:H) contact or seed layer was introduced in
                      the solar cell with ultra-thin nc-SiOx:H and the impact of
                      the nc-Si:H thickness on the cell performance was
                      investigated. To demonstrate scalability, bifacial solar
                      cells with 10 nm ETL were fabricated on the M2 (244 cm2)
                      wafer. The best cell performance is obtained by the solar
                      cell with 5 nm nc-SiOx:H (n) and 5 nm nc-Si:H (n) contact
                      layer and it exhibits open-circuit voltage (Voc) of 738 mV,
                      fill factor (FF) of $80.4\%,$ short-circuit current density
                      (Jsc) of 39.0 mA/cm2 and power conversion efficiency (η) of
                      $23.1\%$ on M2 wafer. Compared to the one with nc-SiOx:H
                      (n), an increase of $3\%abs$ of FF and $0.5\%abs$ of η and
                      lower front contact resistivity is demonstrated for the
                      solar cells with nc-Si:H (n) / nc-SiOx:H (n) double layer,
                      which is caused by the lower energy barrier for electrons,
                      according to the band diagram calculated by the AFORS-HET
                      simulator. A simulation on the solar cell optical and
                      electrical losses was done by the Quokka 3 simulator and
                      shows much lower electrical transport loss and a bit higher
                      front surface transmission loss for the one with double
                      layer than nc-SiOx:H (n) single layer.},
      cin          = {IEK-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000525756800014},
      doi          = {10.1016/j.solmat.2020.110471},
      url          = {https://juser.fz-juelich.de/record/873971},
}