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@ARTICLE{Guan:874048,
      author       = {Guan, Xiangxiang and Yao, Lide and Rushchanskii, Konstantin
                      and Inkinen, Sampo and Yu, Richeng and Lezaic, Marjana and
                      Sánchez, Florencio and Gich, Martí and Dijken, Sebastiaan},
      title        = {{U}nconventional {F}erroelectric {S}witching via {L}ocal
                      {D}omain {W}all {M}otion in {M}ultiferroic ε‐{F}e2{O}3
                      {F}ilms},
      journal      = {Advanced electronic materials},
      volume       = {6},
      number       = {4},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2020-01203},
      pages        = {1901134},
      year         = {2020},
      abstract     = {Deterministic polarization reversal in ferroelectric and
                      multiferroic films is critical for their exploitation in
                      nanoelectronic devices. While ferroelectricity has been
                      studied for nearly a century, major discrepancies in the
                      reported values of coercive fields and saturation
                      polarization persist in literature for many materials. This
                      raises questions about the atomic‐scale mechanisms behind
                      polarization reversal. Unconventional ferroelectric
                      switching in ε‐Fe2O3 films, a material that combines
                      ferrimagnetism and ferroelectricity at room temperature, is
                      reported. High‐resolution in situ scanning transmission
                      electron microscopy experiments and first‐principles
                      calculations demonstrate that polarization reversal in
                      ε‐Fe2O3 occurs around pre‐existing domain walls only,
                      triggering local domain wall motion in moderate electric
                      fields of 250–500 kV cm−1. Calculations indicate that
                      the activation barrier for switching at domain walls is
                      nearly a quarter of that corresponding to the most likely
                      transition paths inside ε‐Fe2O3 domains. Moreover, domain
                      walls provide symmetry lowering of the polar structure near
                      the domain boundary, which is shown to be necessary for
                      ferroelectric switching in ε‐Fe2O3. Local polarization
                      reversal in ε‐Fe2O3 limits the macroscopic ferroelectric
                      response and offers important hints on how to tailor
                      ferroelectric properties by domain structure design in other
                      relevant ferroelectric materials.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143) / Ab
                      initio study of novel multiferroic materials
                      $(jiff38_20190501)$},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143 /
                      $G:(DE-Juel1)jiff38_20190501$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000512960000001},
      doi          = {10.1002/aelm.201901134},
      url          = {https://juser.fz-juelich.de/record/874048},
}