001     874369
005     20210130004647.0
024 7 _ |a 2128/24488
|2 Handle
037 _ _ |a FZJ-2020-01392
041 _ _ |a English
100 1 _ |a Lechermann, Frank
|0 P:(DE-HGF)0
|b 0
|e Corresponding author
111 2 _ |a NIC Symposium 2020
|c Jülich
|d 2020-02-27 - 2020-02-28
|w Germany
245 _ _ |a Cooperation of Many-Body Physics and Defect Chemistry in Transition-Metal Oxides
260 _ _ |a Jülich
|c 2020
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
295 1 0 |a NIC Symposium 2020
300 _ _ |a 93 - 100
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1583842813_2514
|2 PUB:(DE-HGF)
336 7 _ |a Contribution to a book
|0 PUB:(DE-HGF)7
|2 PUB:(DE-HGF)
|m contb
490 0 _ |a Publication Series of the John von Neumann Institute for Computing (NIC) NIC Series
|v 50
520 _ _ |a The problem of defects in correlated materials is at the heart of the fascinating phenomenology of many of these compounds. A vast number of prominent features of strongly correlated systems, such as e. g. high-temperature superconductivity in cuprates and iron pnictides, or heavy-fermion physics in Ce-based compounds is often directly associated with a defect-crystal state. Already the very concept of a doped Mott-insulator builds up on the understanding of impurities implanted in an otherwise perfect crystal lattice. However, a deeper understanding of the realistic physics is then connected to a faithful description of the defect chemistry underlying the material under consideration. We here show that the combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) provides a proper tool to elucidate this realistic interplay between many-body physics and defect chemistry. Focus is on transition-metal oxides which are well known to harbour diverse manifestations of electronic correlations. Two prominent concrete examples, the paramagnetic metal-to-insulator transition in V$_{2}$O$_{3}$ driven by chromium doping, and the long-standing issue of lithium-doped NiO will be addressed in some detail.
536 _ _ |a 899 - ohne Topic (POF3-899)
|0 G:(DE-HGF)POF3-899
|c POF3-899
|f POF III
|x 0
787 0 _ |i IsPartOf
|0 FZJ-2020-01353
856 4 _ |u https://juser.fz-juelich.de/record/874369/files/NIC_2020_Lechermann.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/874369/files/NIC_2020_Lechermann.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:874369
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |a DE-HGF
|b Programmungebundene Forschung
|l ohne Programm
|1 G:(DE-HGF)POF3-890
|0 G:(DE-HGF)POF3-899
|2 G:(DE-HGF)POF3-800
|v ohne Topic
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2020
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a Creative Commons Attribution CC BY 4.0
|0 LIC:(DE-HGF)CCBY4
|2 HGFVOC
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)NIC-20090406
|k NIC
|l John von Neumann - Institut für Computing
|x 0
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a contb
980 _ _ |a I:(DE-Juel1)NIC-20090406
980 _ _ |a UNRESTRICTED
980 1 _ |a FullTexts


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