TY  - CONF
AU  - Ghorbani, Elaheh
AU  - Albe, Karsten
TI  - A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$
VL  - 50
CY  - Jülich
PB  - Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
M1  - FZJ-2020-01426
T2  - Publication Series of the John von Neumann Institute for Computing (NIC) NIC Series
SP  - 221 - 229
PY  - 2020
AB  - CdS is a well-established buffer layer for Cu(In, Ga)(S, Se)$_2$ (CIGS)-based thin film solar cells. However, because of its toxicity, low quantum efficiency at blue-wavelength region, and the drawbacks of the chemical bath deposition technique used for its growth, looking for an alternative buffer material has been a matter of debate in recent years. In this context, $\beta-In_2S_3$ is considered as a promising substitution for CdS. $\beta-In_2S_3$ crystallises in an ordered vacancy spinel-like structure, which can accommodate impurities diffusing from the absorber and/or front contact layers. Due to the existence of structural vacancies in its crystalline matrix, the electronic and optical properties of $\beta-In_2S_3$ can be effectively tuned through (un)intentional doping with a third element. In this contribution, we will report on the origin of n-type conductivity of $\beta-In_2S_3$, the influence of Cu and Na incorporation, the thermodynamic stability and electronic properties of $\beta-In_2S_3$, and the influence of O and Cl on electronic properties of $\beta-In_2S_3$.
T2  - NIC Symposium 2020
CY  - 27 Feb 2020 - 28 Feb 2020, Jülich (Germany)
Y2  - 27 Feb 2020 - 28 Feb 2020
M2  - Jülich, Germany
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
UR  - https://juser.fz-juelich.de/record/874416
ER  -