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| Hauptseite > Publikationsdatenbank > A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$ > print |
| Hauptseite > Publikationsdatenbank > A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$ > print |
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| 100 | 1 | _ | |a Ghorbani, Elaheh |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a NIC Symposium 2020 |c Jülich |d 2020-02-27 - 2020-02-28 |w Germany |
| 245 | _ | _ | |a A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$ |
| 260 | _ | _ | |a Jülich |c 2020 |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |
| 295 | 1 | 0 | |a NIC Symposium 2020 |
| 300 | _ | _ | |a 221 - 229 |
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| 490 | 0 | _ | |a Publication Series of the John von Neumann Institute for Computing (NIC) NIC Series |v 50 |
| 520 | _ | _ | |a CdS is a well-established buffer layer for Cu(In, Ga)(S, Se)$_2$ (CIGS)-based thin film solar cells. However, because of its toxicity, low quantum efficiency at blue-wavelength region, and the drawbacks of the chemical bath deposition technique used for its growth, looking for an alternative buffer material has been a matter of debate in recent years. In this context, $\beta-In_2S_3$ is considered as a promising substitution for CdS. $\beta-In_2S_3$ crystallises in an ordered vacancy spinel-like structure, which can accommodate impurities diffusing from the absorber and/or front contact layers. Due to the existence of structural vacancies in its crystalline matrix, the electronic and optical properties of $\beta-In_2S_3$ can be effectively tuned through (un)intentional doping with a third element. In this contribution, we will report on the origin of n-type conductivity of $\beta-In_2S_3$, the influence of Cu and Na incorporation, the thermodynamic stability and electronic properties of $\beta-In_2S_3$, and the influence of O and Cl on electronic properties of $\beta-In_2S_3$. |
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