% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Kindsmller:874451,
      author       = {Kindsmüller, Andreas and Meledin, Alexander and Mayer,
                      Joachim and Waser, R. and Wouters, Dirk J.},
      title        = {{O}n the role of the metal oxide/reactive electrode
                      interface during the forming procedure of valence change
                      {R}e{RAM} devices},
      journal      = {Nanoscale},
      volume       = {11},
      number       = {39},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2020-01452},
      pages        = {18201 - 18208},
      year         = {2019},
      abstract     = {One of the key issues of resistive switching memory devices
                      is the so called “forming” process, a one time process
                      at a high voltage, which initializes the resistive switching
                      at significantly lower voltages. With this study we identify
                      the influence of the different layers – namely the
                      insulating oxide layer (ZrO2 and Ta2O5) and the reactive
                      ohmic electrode layer (Hf, Ta and Pt) – on the forming
                      voltage and the pristine capacitance of the devices. For
                      this, the forming voltage and pristine capacitance is
                      measured in dependence of the oxide layer thickness with
                      different electrodes. The different slopes of the forming
                      voltage – thickness relation for different top electrodes
                      give an indication that the reactive ohmic electrode is
                      oxidized from the oxide layer underneath and that the degree
                      of the oxidation depends on the thickness of the oxide layer
                      as well as the materials used for the oxide and electrode
                      layer. This finding could be confirmed by X-ray
                      photoelectron spectroscopy (XPS) and transmission electron
                      microscopy (TEM) measurements. From the electrical
                      measurements and the TEM images the thickness of the
                      oxidized electrode layer could be estimated. The degree of
                      the oxidation depends on the oxygen affinity of the oxide
                      and electrode material. The interface dependent (thickness
                      independent) part of the forming voltage is determined by
                      the material of the electrode. The magnitude of this
                      interface voltage could be correlated to the oxide free
                      energy of the electrode material. These results can support
                      the ongoing research towards resistive switching memory
                      devices with a very low forming voltage or forming free
                      behaviour.},
      cin          = {PGI-7 / JARA-FIT / ER-C-2},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31560012},
      UT           = {WOS:000512634500028},
      doi          = {10.1039/C9NR06624A},
      url          = {https://juser.fz-juelich.de/record/874451},
}