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@ARTICLE{Jin:874642,
      author       = {Jin, Lei and Zapf, Michael and Stübinger, Martin and Kamp,
                      Martin and Sing, Michael and Claessen, Ralph and Jia,
                      Chun-Lin},
      title        = {{A}tomic‐scale interface structure in domain matching
                      epitaxial {B}a{B}i{O}$_{3}$ thin films grown on
                      {S}r{T}i{O}$_{3}$ substrates},
      journal      = {Physica status solidi / Rapid research letters Rapid
                      research letters [...]},
      volume       = {14},
      number       = {6},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2020-01561},
      pages        = {2000054 -},
      year         = {2020},
      abstract     = {The electronic structures of BaBiO3 (BBO) thin films grown
                      on SrTiO3 substrates are found to be thickness dependent.
                      The origin of this behavior remains under debate and has
                      been suggested to be attributed to the structural and
                      compositional modifications at the BBO/SrTiO3 interface
                      during the first stage of film growth. Though a wetting
                      layer with thickness of ≈1 nm has been experimentally
                      identified at the interface, details on the microstructures
                      of such a layer and their effect on the subsequent film
                      growth are lacking so far, particularly at the atomic scale.
                      Herein, atomic‐resolution scanning transmission electron
                      microscopy is used to study the interface structure of a
                      30 nm‐thick BBO film grown on an Nb‐doped SrTiO3 (STO)
                      substrate through domain matching epitaxy. An interfacial
                      δ‐Bi2O3 (BO)‐like phase with fluorite structure is
                      identified, showing a layer‐by‐layer spacing of
                      ≈3.2 Å along the growth direction. The orientation
                      relationship between the BO‐like phase and surrounding
                      perovskites (P) is found to be <001>BO||<001>P and
                      <110>BO||<100>P. The presence of the BO‐like phase results
                      in two types of interfaces, i.e., a coherent BO/STO and a
                      semicoherent BBO/BO interface. Thickness variations are
                      observed in the BO‐like layer, resulting in the formation
                      of antiphase domains in the BBO films.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000520715600001},
      doi          = {10.1002/pssr.202000054},
      url          = {https://juser.fz-juelich.de/record/874642},
}