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@ARTICLE{Verbiest:874665,
      author       = {Verbiest, G. J. and Janssen, H. and Xu, D. and Ge, X. and
                      Goldsche, M. and Sonntag, J. and Khodkov, T. and Banszerus,
                      L. and von den Driesch, N. and Buca, D. and Watanabe, K. and
                      Taniguchi, T. and Stampfer, Christoph},
      title        = {{I}ntegrated impedance bridge for absolute capacitance
                      measurements at cryogenic temperatures and finite magnetic
                      fields},
      journal      = {Review of scientific instruments},
      volume       = {90},
      number       = {8},
      issn         = {1089-7623},
      address      = {[S.l.]},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2020-01581},
      pages        = {084706},
      year         = {2019},
      abstract     = {We developed an impedance bridge that operates at cryogenic
                      temperatures (down to 60 mK) and in perpendicular magnetic
                      fields up to at least 12 T. This is achieved by mounting a
                      GaAs HEMT amplifier perpendicular to a printed circuit board
                      containing the device under test and thereby parallel to the
                      magnetic field. The measured amplitude and phase of the
                      output signal allows for the separation of the total
                      impedance into an absolute capacitance and a resistance.
                      Through a detailed noise characterization, we find that the
                      best resolution is obtained when operating the HEMT
                      amplifier at the highest gain. We obtained a resolution in
                      the absolute capacitance of 6.4 aF/Hz⎯⎯⎯⎯⎯√ at
                      77 K on a comb-drive actuator while maintaining a small
                      excitation amplitude of 15 kBT/e. We show the magnetic field
                      functionality of our impedance bridge by measuring the
                      quantum Hall plateaus of a top-gated hBN/graphene/hBN
                      heterostructure at 60 mK with a probe signal of 12.8 kBT/e.},
      cin          = {PGI-9 / JARA-FIT / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)VDB881 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31472650},
      UT           = {WOS:000483885600007},
      doi          = {10.1063/1.5089207},
      url          = {https://juser.fz-juelich.de/record/874665},
}