%0 Journal Article
%A Sonntag, Jens
%A Li, Jiahan
%A Plaud, Alexandre
%A Loiseau, Annick
%A Barjon, Julien
%A Edgar, J. H.
%A Stampfer, Christoph
%T Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure
%J 2D Materials
%V 7
%N 3
%@ 2053-1583
%C Bristol
%I IOP Publ.
%M FZJ-2020-01763
%P 031009
%D 2020
%X Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 μm at low temperatures and electron-phonon scattering limited transport at room temperature.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000543385800001
%R 10.1088/2053-1583/ab89e5
%U https://juser.fz-juelich.de/record/875003