TY  - JOUR
AU  - Sonntag, Jens
AU  - Li, Jiahan
AU  - Plaud, Alexandre
AU  - Loiseau, Annick
AU  - Barjon, Julien
AU  - Edgar, J. H.
AU  - Stampfer, Christoph
TI  - Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure
JO  - 2D Materials
VL  - 7
IS  - 3
SN  - 2053-1583
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2020-01763
SP  - 031009
PY  - 2020
AB  - Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 μm at low temperatures and electron-phonon scattering limited transport at room temperature.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000543385800001
DO  - DOI:10.1088/2053-1583/ab89e5
UR  - https://juser.fz-juelich.de/record/875003
ER  -