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@ARTICLE{Sonntag:875003,
      author       = {Sonntag, Jens and Li, Jiahan and Plaud, Alexandre and
                      Loiseau, Annick and Barjon, Julien and Edgar, J. H. and
                      Stampfer, Christoph},
      title        = {{E}xcellent electronic transport in heterostructures of
                      graphene and monoisotopic boron-nitride grown at atmospheric
                      pressure},
      journal      = {2D Materials},
      volume       = {7},
      number       = {3},
      issn         = {2053-1583},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2020-01763},
      pages        = {031009},
      year         = {2020},
      abstract     = {Hexagonal boron nitride (BN), one of the very few layered
                      insulators, plays a crucial role in 2D materials research.
                      In particular, BN grown with a high pressure technique has
                      proven to be an excellent substrate material for graphene
                      and related 2D materials, but at the same time very hard to
                      replace. Here we report on a method of growth at atmospheric
                      pressure as a true alternative for producing BN for high
                      quality graphene/BN heterostructures. The process is not
                      only more scalable, but also allows to grow isotopically
                      purified BN crystals. We employ Raman spectroscopy,
                      cathodoluminescence, and electronic transport measurements
                      to show the high-quality of such monoisotopic BN and its
                      potential for graphene-based heterostructures. The excellent
                      electronic performance of our heterostructures is
                      demonstrated by well developed fractional quantum Hall
                      states, ballistic transport over distances around 10 μm at
                      low temperatures and electron-phonon scattering limited
                      transport at room temperature.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000543385800001},
      doi          = {10.1088/2053-1583/ab89e5},
      url          = {https://juser.fz-juelich.de/record/875003},
}