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| 001 | 875003 | ||
| 005 | 20220930130235.0 | ||
| 024 | 7 | _ | |a 10.1088/2053-1583/ab89e5 |2 doi |
| 024 | 7 | _ | |a 2128/25140 |2 Handle |
| 024 | 7 | _ | |a altmetric:80261112 |2 altmetric |
| 024 | 7 | _ | |a WOS:000543385800001 |2 WOS |
| 037 | _ | _ | |a FZJ-2020-01763 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Sonntag, Jens |0 P:(DE-Juel1)167238 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure |
| 260 | _ | _ | |a Bristol |c 2020 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1593157532_7921 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 μm at low temperatures and electron-phonon scattering limited transport at room temperature. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Li, Jiahan |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Plaud, Alexandre |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Loiseau, Annick |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Barjon, Julien |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Edgar, J. H. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Stampfer, Christoph |0 P:(DE-Juel1)180322 |b 6 |
| 773 | _ | _ | |a 10.1088/2053-1583/ab89e5 |0 PERI:(DE-600)2779376-X |n 3 |p 031009 |t 2D Materials |v 7 |y 2020 |x 2053-1583 |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/875003/files/Sonntag_2020_2D_Mater._7_031009.pdf |
| 856 | 4 | _ | |y OpenAccess |x pdfa |u https://juser.fz-juelich.de/record/875003/files/Sonntag_2020_2D_Mater._7_031009.pdf?subformat=pdfa |
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| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2020 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a Creative Commons Attribution CC BY 4.0 |0 LIC:(DE-HGF)CCBY4 |2 HGFVOC |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b 2D MATER : 2017 |
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| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
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