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@ARTICLE{Reindl:875069,
      author       = {Reindl, Johannes and Volker, Hanno and Breznay, Nicholas P.
                      and Wuttig, Matthias},
      title        = {{P}ersistence of spin memory in a crystalline, insulating
                      phase-change material},
      journal      = {npj quantum materials},
      volume       = {4},
      number       = {1},
      issn         = {2397-4648},
      address      = {[London]},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2020-01781},
      pages        = {57},
      year         = {2019},
      abstract     = {The description of disorder-induced electron localization
                      by Anderson over 60 years ago began a quest for novel
                      phenomena emerging from electronic interactions in the
                      presence of disorder. Even today, the interplay of
                      interactions and disorder remains incompletely understood.
                      This holds in particular for strongly disordered materials
                      where charge transport depends on ‘hopping’ between
                      localized sites. Here we report an unexpected spin
                      sensitivity of the electrical conductivity at the transition
                      from diffusive to hopping conduction in a material that
                      combines strong spin-orbit coupling and weak
                      inter-electronic interactions. In thin films of the
                      disordered crystalline phase change material SnSb2Te4, a
                      distinct change in electrical conductance with applied
                      magnetic field is observed at low temperatures. This
                      magnetoconductance changes sign and becomes anisotropic at
                      the disorder-driven crossover from strongly localized
                      (hopping) to weakly localized (diffusive) electron motion.
                      The positive and isotropic magnetoconductance arises from
                      disruption of spin correlations that inhibit hopping
                      transport. This experimental observation of a recently
                      hypothesized ‘spin memory’ demonstrates the spin plays a
                      previously overlooked role in the disorder-driven transition
                      between weak and strong localization in materials with
                      strong spin–orbit interactions.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000502294100001},
      doi          = {10.1038/s41535-019-0196-6},
      url          = {https://juser.fz-juelich.de/record/875069},
}