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@ARTICLE{Wysocki:875404,
author = {Wysocki, Lena and Schöpf, Jörg and Ziese, Michael and
Yang, Lin and Kovács, András and Jin, Lei and Versteeg,
Rolf B. and Bliesener, Andrea and Gunkel, Felix and
Kornblum, Lior and Dittmann, Regina and van Loosdrecht, Paul
H. M. and Lindfors-Vrejoiu, Ionela},
title = {{E}lectronic {I}nhomogeneity {I}nfluence on the {A}nomalous
{H}all {R}esistivity {L}oops of {S}r{R}u{O} 3 {E}pitaxially
{I}nterfaced with 5d {P}erovskites},
journal = {ACS omega},
volume = {5},
number = {11},
issn = {2470-1343},
address = {Washington, DC},
publisher = {ACS Publications},
reportid = {FZJ-2020-02013},
pages = {5824 - 5833},
year = {2020},
abstract = {SrRuO3, a 4d ferromagnet with multiple Weyl nodes at the
Fermi level, offers a rich playground to design epitaxial
heterostructures and superlattices with fascinating magnetic
and magnetotransport properties. Interfacing ultrathin
SrRuO3 layers with large spin–orbit coupling 5d
transition-metal oxides, such as SrIrO3, results in
pronounced peaklike anomalies in the magnetic field
dependence of the Hall resistivity. Such anomalies have been
attributed either to the formation of Néel-type skyrmions
or to modifications of the Berry curvature of the
topologically nontrivial conduction bands near the Fermi
level of SrRuO3. Here, epitaxial multilayers based on SrRuO3
interfaced with 5d perovskite oxides, such as SrIrO3 and
SrHfO3, were studied. This work focuses on the
magnetotransport properties of the multilayers, aiming to
unravel the role played by the interfaces with 5d
perovskites in the peaklike anomalies of the Hall resistance
loops of SrRuO3 layers. Interfacing with large band gap
insulating SrHfO3 layers did not influence the anomalous
Hall resistance loops, while interfacing with the nominally
paramagnetic semimetal SrIrO3 resulted in pronounced
peaklike anomalies, which have been lately attributed to a
topological Hall effect contribution as a result of
skyrmions. This interpretation is, however, under strong
debate and lately alternative causes, such as inhomogeneity
of the thickness and the electronic properties of the SrRuO3
layers, have been considered. Aligned with these latter
proposals, our findings reveal the central role played in
the anomalies of the Hall resistivity loops by electronic
inhomogeneity of SrRuO3 layers due to the interfacing with
semimetallic 5d5 SrIrO3.},
cin = {PGI-7 / JARA-FIT / PGI-5 / ER-C-1},
ddc = {660},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)ER-C-1-20170209},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:32226862},
UT = {WOS:000521782400028},
doi = {10.1021/acsomega.9b03996},
url = {https://juser.fz-juelich.de/record/875404},
}