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@ARTICLE{vonWitzleben:877262,
      author       = {von Witzleben, Moritz and Hennen, T. and Kindsmüller, A.
                      and Menzel, S. and Waser, R. and Böttger, U.},
      title        = {{S}tudy of the {SET} switching event of {VCM}-based
                      memories on a picosecond timescale},
      journal      = {Journal of applied physics},
      volume       = {127},
      number       = {20},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2020-02088},
      pages        = {204501 -},
      year         = {2020},
      abstract     = {In this paper, we present an approach of measuring the SET
                      kinetics of redox-based resistive memories at timescales
                      below 100 ps. Automatic measurements with an RF pulse
                      generator and a source measure unit allow the consecutive
                      application of short electrical pulses and the precise
                      detection of the device resistance. In addition, a
                      statistical evaluation of the SET kinetics has been
                      performed. By increasing the pulse duration in small steps,
                      varying the pulse amplitude and collecting a comprehensive
                      dataset, the transient resistance of a device can be
                      determined at a picosecond timescale. With this setup, we
                      measured the SET kinetics of two different valence change
                      memory-based resistive switching oxides, namely, TaOx and
                      ZrOx, between 50 ps and 250 ps. Two characteristic times
                      were measured: the SET time, being the delay after which the
                      transition to the low resistance state sets in, and the
                      transition time, which is the timespan during which the
                      resistance shifts from the high to the low resistive state.
                      We measured SET times down to 50 ps and transition times
                      below 15 ps for both materials. The intrinsic maximum
                      switching speed is not reached yet, which is limited by the
                      ion migration in the oxides, possibly corresponding to the
                      phonon THz frequency. Although charging times and heating
                      times potentially slow down the measured SET times, they
                      still allow 50 ps writing times at voltages of less than
                      5.0 V},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000537104800001},
      doi          = {10.1063/5.0003840},
      url          = {https://juser.fz-juelich.de/record/877262},
}