001     877262
005     20211206142025.0
024 7 _ |a 10.1063/5.0003840
|2 doi
024 7 _ |a 0021-8979
|2 ISSN
024 7 _ |a 0148-6349
|2 ISSN
024 7 _ |a 1089-7550
|2 ISSN
024 7 _ |a 1520-8850
|2 ISSN
024 7 _ |a 2163-5102
|2 ISSN
024 7 _ |a 2128/24956
|2 Handle
024 7 _ |a WOS:000537104800001
|2 WOS
037 _ _ |a FZJ-2020-02088
082 _ _ |a 530
100 1 _ |a von Witzleben, Moritz
|0 P:(DE-Juel1)190585
|b 0
|e Corresponding author
|u fzj
245 _ _ |a Study of the SET switching event of VCM-based memories on a picosecond timescale
260 _ _ |a Melville, NY
|c 2020
|b American Inst. of Physics
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1638775550_11142
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a In this paper, we present an approach of measuring the SET kinetics of redox-based resistive memories at timescales below 100 ps. Automatic measurements with an RF pulse generator and a source measure unit allow the consecutive application of short electrical pulses and the precise detection of the device resistance. In addition, a statistical evaluation of the SET kinetics has been performed. By increasing the pulse duration in small steps, varying the pulse amplitude and collecting a comprehensive dataset, the transient resistance of a device can be determined at a picosecond timescale. With this setup, we measured the SET kinetics of two different valence change memory-based resistive switching oxides, namely, TaOx and ZrOx, between 50 ps and 250 ps. Two characteristic times were measured: the SET time, being the delay after which the transition to the low resistance state sets in, and the transition time, which is the timespan during which the resistance shifts from the high to the low resistive state. We measured SET times down to 50 ps and transition times below 15 ps for both materials. The intrinsic maximum switching speed is not reached yet, which is limited by the ion migration in the oxides, possibly corresponding to the phonon THz frequency. Although charging times and heating times potentially slow down the measured SET times, they still allow 50 ps writing times at voltages of less than 5.0 V
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Hennen, T.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Kindsmüller, A.
|0 0000-0001-6236-7391
|b 2
700 1 _ |a Menzel, S.
|0 P:(DE-Juel1)158062
|b 3
700 1 _ |a Waser, R.
|0 P:(DE-Juel1)131022
|b 4
700 1 _ |a Böttger, U.
|0 P:(DE-HGF)0
|b 5
773 _ _ |a 10.1063/5.0003840
|g Vol. 127, no. 20, p. 204501 -
|0 PERI:(DE-600)1476463-5
|n 20
|p 204501 -
|t Journal of applied physics
|v 127
|y 2020
|x 1089-7550
856 4 _ |u https://juser.fz-juelich.de/record/877262/files/5.0003840.pdf
|y Published on 2020-05-22. Available in OpenAccess from 2021-05-22.
856 4 _ |u https://juser.fz-juelich.de/record/877262/files/5.0003840.pdf?subformat=pdfa
|x pdfa
|y Published on 2020-05-22. Available in OpenAccess from 2021-05-22.
909 C O |o oai:juser.fz-juelich.de:877262
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)190585
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)158062
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)131022
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|3 G:(DE-HGF)POF3
|2 G:(DE-HGF)POF3-500
|4 G:(DE-HGF)POF
|v Controlling Electron Charge-Based Phenomena
|x 0
914 1 _ |y 2020
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
|d 2020-01-12
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0600
|2 StatID
|b Ebsco Academic Search
|d 2020-01-12
915 _ _ |a Embargoed OpenAccess
|0 StatID:(DE-HGF)0530
|2 StatID
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b J APPL PHYS : 2018
|d 2020-01-12
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
|d 2020-01-12
915 _ _ |a Peer Review
|0 StatID:(DE-HGF)0030
|2 StatID
|b ASC
|d 2020-01-12
915 _ _ |a National-Konsortium
|0 StatID:(DE-HGF)0430
|2 StatID
|d 2020-01-12
|w ger
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
|d 2020-01-12
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0320
|2 StatID
|b PubMed Central
|d 2020-01-12
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
|d 2020-01-12
|w ger
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
920 1 _ |0 I:(DE-Juel1)PGI-10-20170113
|k PGI-10
|l JARA Institut Green IT
|x 2
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a I:(DE-Juel1)PGI-10-20170113
980 _ _ |a UNRESTRICTED
980 1 _ |a FullTexts


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