TY  - JOUR
AU  - Kampmann, Felix
AU  - Scheuschner, Nils
AU  - Terrés, Bernat
AU  - Jörger, Danny
AU  - Stampfer, Christoph
AU  - Maultzsch, Janina
TI  - Raman Spectroscopy of Lithographically Defined Graphene Nanoribbons - Influence of Size and Defects
JO  - Annalen der Physik
VL  - 529
IS  - 11
SN  - 0003-3804
CY  - Leipzig
PB  - Barth88001
M1  - FZJ-2020-02121
SP  - 1700167 -
PY  - 2017
N1  - Bitte den Volltext ergänzen
AB  - Graphene nanostructures are an important building block to make use of the properties of graphene for applications in integrated devices. It is important to study edge roughness and defects in such nanostructures for further device improvement as they become important when downscaling structures. Recent Raman studies focused mainly on the D mode to characterize the defects in graphene and graphene nanoribbons (GNR) whereas not much attention has been paid to the D′ mode that is smaller in Raman intensity. In this work we show by comparison with AFM measurements of the GNR width that both defect‐induced Raman modes have different scattering length scales. Furthermore the size and quality of lithographically defined GNRs can be estimated by a close analysis of the defect‐induced Raman modes and the width of the well‐studied 2D mode of graphene. The findings are explained by the different vibration pattern for both Raman modes and the differences in the matrix elements determining the Raman intensity, i.e. the electron‐phonon coupling and the phonon density of states.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000414808800022
DO  - DOI:10.1002/andp.201700167
UR  - https://juser.fz-juelich.de/record/877305
ER  -