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@ARTICLE{Kampmann:877305,
      author       = {Kampmann, Felix and Scheuschner, Nils and Terrés, Bernat
                      and Jörger, Danny and Stampfer, Christoph and Maultzsch,
                      Janina},
      title        = {{R}aman {S}pectroscopy of {L}ithographically {D}efined
                      {G}raphene {N}anoribbons - {I}nfluence of {S}ize and
                      {D}efects},
      journal      = {Annalen der Physik},
      volume       = {529},
      number       = {11},
      issn         = {0003-3804},
      address      = {Leipzig},
      publisher    = {Barth88001},
      reportid     = {FZJ-2020-02121},
      pages        = {1700167 -},
      year         = {2017},
      note         = {Bitte den Volltext ergänzen},
      abstract     = {Graphene nanostructures are an important building block to
                      make use of the properties of graphene for applications in
                      integrated devices. It is important to study edge roughness
                      and defects in such nanostructures for further device
                      improvement as they become important when downscaling
                      structures. Recent Raman studies focused mainly on the D
                      mode to characterize the defects in graphene and graphene
                      nanoribbons (GNR) whereas not much attention has been paid
                      to the D′ mode that is smaller in Raman intensity. In this
                      work we show by comparison with AFM measurements of the GNR
                      width that both defect‐induced Raman modes have different
                      scattering length scales. Furthermore the size and quality
                      of lithographically defined GNRs can be estimated by a close
                      analysis of the defect‐induced Raman modes and the width
                      of the well‐studied 2D mode of graphene. The findings are
                      explained by the different vibration pattern for both Raman
                      modes and the differences in the matrix elements determining
                      the Raman intensity, i.e. the electron‐phonon coupling and
                      the phonon density of states.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000414808800022},
      doi          = {10.1002/andp.201700167},
      url          = {https://juser.fz-juelich.de/record/877305},
}