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@ARTICLE{Ersfeld:877335,
      author       = {Ersfeld, Manfred and Volmer, Frank and Rathmann, Lars and
                      Kotewitz, Luca and Heithoff, Maximilian and Lohmann, Mark
                      and Yang, Bowen and Watanabe, Kenji and Taniguchi, Takashi
                      and Bartels, Ludwig and Shi, Jing and Stampfer, Christoph
                      and Beschoten, Bernd},
      title        = {{U}nveiling {V}alley {L}ifetimes of {F}ree {C}harge
                      {C}arriers in {M}onolayer {WS}e 2},
      journal      = {Nano letters},
      volume       = {20},
      number       = {5},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2020-02148},
      pages        = {3147 - 3154},
      year         = {2020},
      abstract     = {We report on nanosecond-long, gate-dependent valley
                      lifetimes of free charge carriers in monolayer WSe2,
                      unambiguously identified by the combination of time-resolved
                      Kerr rotation and electrical transport measurements. While
                      the valley polarization increases when tuning the Fermi
                      level into the conduction or valence band, there is a strong
                      decrease of the respective valley lifetime consistent with
                      both electron-phonon and spin-orbit scattering. The longest
                      lifetimes are seen for spin-polarized bound excitons in the
                      band gap region. We explain our findings via two distinct,
                      Fermi-level-dependent scattering channels of optically
                      excited, valley-polarized bright trions either via dark or
                      bound states. By electrostatic gating we demonstrate that
                      the transition-metal dichalcogenide WSe2 can be tuned to be
                      either an ideal host for long-lived localized spin states or
                      allow for nanosecond valley lifetimes of free charge
                      carriers (>10 ns).},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:32202802},
      UT           = {WOS:000535255300027},
      doi          = {10.1021/acs.nanolett.9b05138},
      url          = {https://juser.fz-juelich.de/record/877335},
}