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@ARTICLE{Mikulics:877429,
      author       = {Mikulics, M. and Lu, J. G. and Huang, L. and Tse, P. L. and
                      Zhang, J. Z. and Mayer, J. and Hardtdegen, H.},
      title        = {{L}aser micro annealing conditioning for the suppression of
                      statistical scatter in freestanding {S}b2{T}e3 nanowire
                      resistance},
      journal      = {FlatChem},
      volume       = {21},
      issn         = {2452-2627},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2020-02184},
      pages        = {100164 -},
      year         = {2020},
      abstract     = {The effect of long-term laser micro annealing (LMA) on the
                      statistical resistance scatter in freestanding Sb2Te3
                      layered nanowires (NWs) was studied during the formation of
                      ohmic contacts. The process was developed and optimized by
                      monitoring the evolution of the NW resistance and the DC
                      photo-responsivity and correlating the characteristics to
                      the structural degradation observed using micro Raman
                      spectroscopy. The NWs were transferred to and integrated
                      into Ti/Au coplanar strip lines on flexible polyethylene
                      terephthalate (PET) substrates designed for optoelectronic
                      applications. Four different stages in the NW resistance
                      were revealed. The optimal “time-annealing” interval was
                      identified, in which the lowest NW resistance was determined
                      and in which no evidence for structural degradation
                      processes in the active central NWs’ region was found. Low
                      dark currents below 10−5 A at 100 mV bias as well as high
                      DC photo-responsivity ~0.6 A/W were achieved rendering the
                      nanowire devices as very promising candidates for highly
                      sensitive infrared optoelectronics. The statistical scatter
                      in the NW resistance was minimized to a range of $±10\%$ of
                      the total value by conditioning the contact/annealed regions
                      of the NWs individually and tuning the resistance of these
                      regions as a function of the total laser annealing time.},
      cin          = {ER-C-2},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000540780300004},
      doi          = {10.1016/j.flatc.2020.100164},
      url          = {https://juser.fz-juelich.de/record/877429},
}