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@ARTICLE{Just:877592,
      author       = {Just, Sven and Lüpke, Felix and Cherepanov, Vasily and
                      Tautz, F. Stefan and Voigtländer, Bert},
      title        = {{P}arasitic conduction channels in topological insulator
                      thin films},
      journal      = {Physical review / B},
      volume       = {101},
      number       = {24},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2020-02314},
      pages        = {245413},
      year         = {2020},
      abstract     = {Thin films of topological insulators (TI) usually exhibit
                      multiple parallel conduction channels for the transport of
                      electrical current. Aside from the topologically protected
                      surface states (TSS), parallel channels may exist, namely,
                      the interior of the not-ideally insulating TI film, the
                      interface layer to the substrate, and the substrate itself.
                      To be able to take advantage of the auspicious transport
                      properties of the TSS, the influence of the parasitic
                      parallel channels on the total current transport has to be
                      minimized. Because the conductivity of the interior (bulk)
                      of the thin TI film is difficult to access by measurements,
                      we propose here an approach for calculating the mobile
                      charge carrier concentration in the TI film. To this end, we
                      calculate the near-surface band bending using parameters
                      obtained experimentally from surface-sensitive measurements,
                      namely, (gate-dependent) four-point resistance measurements
                      and angle-resolved photoelectron spectroscopy. While in most
                      cases another parameter in the calculations, i.e., the
                      concentration of unintentional dopants inside the thin TI
                      film, is unknown, it turns out that in the thin-film limit
                      the band bending is largely independent of the dopant
                      concentration in the film. Thus, a well-founded estimate of
                      the total mobile charge carrier concentration and the
                      conductivity of the interior of the thin TI film proves
                      possible. Since the interface and substrate conductivities
                      can be measured by a four-probe conductance measurement
                      prior to the deposition of the TI film, the total
                      contribution of all parasitic channels, and therefore also
                      the contribution of the vitally important TSS, can be
                      determined reliably.},
      cin          = {PGI-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000539495600006},
      doi          = {10.1103/PhysRevB.101.245413},
      url          = {https://juser.fz-juelich.de/record/877592},
}