%0 Journal Article
%A Qiu, Kaifu
%A Pomaska, Manuel
%A Li, Shenghao
%A Lambertz, Andreas
%A Duan, Weiyuan
%A Gad, Alaaeldin
%A Geitner, Matthias
%A Brugger, Jana
%A Liang, Zongcun
%A Shen, Hui
%A Finger, Friedhelm
%A Rau, Uwe
%A Ding, Kaining
%T Development of Conductive SiC x :H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts
%J ACS applied materials & interfaces
%V 20
%@ 1944-8252
%C Washington, DC
%I Soc.
%M FZJ-2020-02403
%P 29986–29992
%D 2020
%X Conductive hydrogenated silicon carbide (SiCx:H) is discovered as a promising hydrogenation material for tunnel oxide passivating contacts (TOPCon) solar cells. The proposed SiCx:H layer enables a good passivation quality and features a good electrical conductivity, which eliminates the need of etching back of SiNx:H and indium tin oxide (ITO)/Ag deposition for metallization and reduces the number of process steps. The SiCx:H is deposited by hot wire chemical vapor deposition (HWCVD) and the filament temperature (Tf) during deposition is systematically investigated. Via tuning the SiCx:H layer, implied open-circuit voltages (iVoc) up to 742 ± 0.5 mV and a contact resistivity (ρc) of 21.1 ± 5.4 mΩ·cm2 is achieved using SiCx:H on top of poly-Si(n)/SiOx/c-Si(n) stack at Tf of 2000 °C. Electrochemical capacitance–voltage (ECV) and secondary ion mass spectrometry (SIMS) measurements were conducted to investigate the passivation mechanism. Results show that the hydrogenation at the SiOx/c-Si(n) interface is responsible for the high passivation quality. To assess its validity, the TOPCon stack was incorporated as rear electron selective-contact in a proof-of-concept n-type solar cells featuring ITO/a-Si:H(p)/a-Si:H(i) as front hole selective-contact, which demonstrates a conversion efficiency up to 21.4%, a noticeable open-circuit voltage (Voc) of 724 mV and a fill factor (FF) of 80%.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ 32501671
%U <Go to ISI:>//WOS:000546698600111
%R 10.1021/acsami.0c06637
%U https://juser.fz-juelich.de/record/877693