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@ARTICLE{Qiu:877693,
      author       = {Qiu, Kaifu and Pomaska, Manuel and Li, Shenghao and
                      Lambertz, Andreas and Duan, Weiyuan and Gad, Alaaeldin and
                      Geitner, Matthias and Brugger, Jana and Liang, Zongcun and
                      Shen, Hui and Finger, Friedhelm and Rau, Uwe and Ding,
                      Kaining},
      title        = {{D}evelopment of {C}onductive {S}i{C} x :{H} as a {N}ew
                      {H}ydrogenation {T}echnique for {T}unnel {O}xide
                      {P}assivating {C}ontacts},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {20},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2020-02403},
      pages        = {29986–29992},
      year         = {2020},
      abstract     = {Conductive hydrogenated silicon carbide (SiCx:H) is
                      discovered as a promising hydrogenation material for tunnel
                      oxide passivating contacts (TOPCon) solar cells. The
                      proposed SiCx:H layer enables a good passivation quality and
                      features a good electrical conductivity, which eliminates
                      the need of etching back of SiNx:H and indium tin oxide
                      (ITO)/Ag deposition for metallization and reduces the number
                      of process steps. The SiCx:H is deposited by hot wire
                      chemical vapor deposition (HWCVD) and the filament
                      temperature (Tf) during deposition is systematically
                      investigated. Via tuning the SiCx:H layer, implied
                      open-circuit voltages (iVoc) up to 742 ± 0.5 mV and a
                      contact resistivity (ρc) of 21.1 ± 5.4 mΩ·cm2 is
                      achieved using SiCx:H on top of poly-Si(n)/SiOx/c-Si(n)
                      stack at Tf of 2000 °C. Electrochemical
                      capacitance–voltage (ECV) and secondary ion mass
                      spectrometry (SIMS) measurements were conducted to
                      investigate the passivation mechanism. Results show that the
                      hydrogenation at the SiOx/c-Si(n) interface is responsible
                      for the high passivation quality. To assess its validity,
                      the TOPCon stack was incorporated as rear electron
                      selective-contact in a proof-of-concept n-type solar cells
                      featuring ITO/a-Si:H(p)/a-Si:H(i) as front hole
                      selective-contact, which demonstrates a conversion
                      efficiency up to $21.4\%,$ a noticeable open-circuit voltage
                      (Voc) of 724 mV and a fill factor (FF) of $80\%.$},
      cin          = {IEK-5 / HNF},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)HNF-20170116},
      pnm          = {113 - Methods and Concepts for Material Development
                      (POF3-113) / 121 - Solar cells of the next generation
                      (POF3-121)},
      pid          = {G:(DE-HGF)POF3-113 / G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {32501671},
      UT           = {WOS:000546698600111},
      doi          = {10.1021/acsami.0c06637},
      url          = {https://juser.fz-juelich.de/record/877693},
}