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| 001 | 877693 | ||
| 005 | 20240712084508.0 | ||
| 024 | 7 | _ | |a 10.1021/acsami.0c06637 |2 doi |
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| 100 | 1 | _ | |a Qiu, Kaifu |0 P:(DE-Juel1)178049 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Development of Conductive SiC x :H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts |
| 260 | _ | _ | |a Washington, DC |c 2020 |b Soc. |
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| 520 | _ | _ | |a Conductive hydrogenated silicon carbide (SiCx:H) is discovered as a promising hydrogenation material for tunnel oxide passivating contacts (TOPCon) solar cells. The proposed SiCx:H layer enables a good passivation quality and features a good electrical conductivity, which eliminates the need of etching back of SiNx:H and indium tin oxide (ITO)/Ag deposition for metallization and reduces the number of process steps. The SiCx:H is deposited by hot wire chemical vapor deposition (HWCVD) and the filament temperature (Tf) during deposition is systematically investigated. Via tuning the SiCx:H layer, implied open-circuit voltages (iVoc) up to 742 ± 0.5 mV and a contact resistivity (ρc) of 21.1 ± 5.4 mΩ·cm2 is achieved using SiCx:H on top of poly-Si(n)/SiOx/c-Si(n) stack at Tf of 2000 °C. Electrochemical capacitance–voltage (ECV) and secondary ion mass spectrometry (SIMS) measurements were conducted to investigate the passivation mechanism. Results show that the hydrogenation at the SiOx/c-Si(n) interface is responsible for the high passivation quality. To assess its validity, the TOPCon stack was incorporated as rear electron selective-contact in a proof-of-concept n-type solar cells featuring ITO/a-Si:H(p)/a-Si:H(i) as front hole selective-contact, which demonstrates a conversion efficiency up to 21.4%, a noticeable open-circuit voltage (Voc) of 724 mV and a fill factor (FF) of 80%. |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/877693/files/Conductive%20SiC%20for%20hydrogenation-Preprint.pdf |y OpenAccess |
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