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@ARTICLE{Drgeler:877737,
      author       = {Drögeler, Marc and Banszerus, Luca and Volmer, Frank and
                      Taniguchi, Takashi and Watanabe, Kenji and Beschoten, Bernd
                      and Stampfer, Christoph},
      title        = {{D}ry-transferred {CVD} graphene for inverted spin valve
                      devices},
      journal      = {Applied physics letters},
      volume       = {111},
      number       = {15},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2020-02434},
      pages        = {152402 -},
      year         = {2017},
      abstract     = {Integrating high-mobility graphene grown by chemical vapor
                      deposition (CVD) into spin transport devices is one of the
                      key tasks in graphene spintronics. We use a van der Waals
                      pick-up technique to transfer CVD graphene by hexagonal
                      boron nitride (hBN) from the copper growth substrate onto
                      predefined Co/MgO electrodes to build inverted spin valve
                      devices. Two approaches are presented: (i) a process where
                      the CVD-graphene/hBN stack is first patterned into a bar and
                      then transferred by a second larger hBN crystal onto spin
                      valve electrodes and (ii) a direct transfer of a
                      CVD-graphene/hBN stack. We report record high spin lifetimes
                      in CVD graphene of up to 1.75 ns at room temperature.
                      Overall, the performances of our devices are comparable to
                      devices fabricated from exfoliated graphene also revealing
                      nanosecond spin lifetimes. We expect that our dry transfer
                      methods pave the way towards more advanced device geometries
                      not only for spintronic applications but also for
                      CVD-graphene-based nanoelectronic devices in general where
                      patterning of the CVD graphene is required prior to the
                      assembly of final van der Waals heterostructures.We
                      acknowledge funding from the European Union Seventh
                      Framework Programme under Grant Agreement No. 604391
                      Graphene Flagship and the Deutsche Forschungsgemeinschaft
                      (BE 2441/9-1) and support by the Helmholtz Nano Facility
                      (HNF)36 at the Forschungszentrum Jülich. Growth of
                      hexagonal boron nitride crystals was supported by the
                      Elemental Strategy Initiative conducted by the MEXT, Japan
                      and JSPS KAKENHI Grant Nos. JP26248061, JP15K21722, and
                      JP25106006.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000413196100019},
      doi          = {10.1063/1.5000545},
      url          = {https://juser.fz-juelich.de/record/877737},
}