%0 Journal Article
%A Schmitz, Michael
%A Engels, Stephan
%A Banszerus, Luca
%A Watanabe, Kenji
%A Taniguchi, Takashi
%A Stampfer, Christoph
%A Beschoten, Bernd
%T High mobility dry-transferred CVD bilayer graphene
%J Applied physics letters
%V 110
%N 26
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2020-02440
%P 263110 -
%D 2017
%X We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm2/(Vs) at 2 K and up to 40 000 cm2/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.This work was supported by the EU project Graphene Flagship (Contract No. 696656) and the DFG (BE 2441/9-1). The growth of hexagonal boron nitride crystals was supported by the Elemental Strategy Initiative conducted by the MEXT, Japan, and JSPS KAKENHI Grant Nos. JP26248061, JP15K21722, and JP25106006.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000404627700045
%R 10.1063/1.4990390
%U https://juser.fz-juelich.de/record/877752